National Taiwan University

Advanced Electronics & Materials Lab.

Min-Hung Lee
https://sites.google.com/view/ntu-mhlab/home

Research Field

Microelectronic Engineering

Introduction

Min-Hung Lee (Senior Member, IEEE) received the Ph.D. degree in Electrical Engineering from National Taiwan University, Taiwan, 2002. Currently, he is a Professor in the Program for Semiconductor Devices, Materials, and Hetero-integration (DMHI), Graduate School of Advanced Technology (GSAT) at National Taiwan University (NTU). Prior to joining NTU in 2023, he was a Distinguished Professor, Director of Graduate Institute of Electro-Optical Science and Technology (IEO) at National Taiwan Normal University (NTNU). He was a Research Visiting Scholar at University of California, Berkeley in 2019. He worked with Industrial Technology Research Institute (ITRI) on Strained-Si and Flexible Display technology in 2002-2007. His research themes focus on Ferroelectric Memory and Logic devices, Neural-network devices, GaN-based devices, Oxide-Semiconductor devices, Flexible Electronics, and Strained Engineering. He has authored or co-authored over 200 publications and holds 11 U.S. patents.

Our laboratory centers its research on device technology and fabrication, with a primary focus on exploring ferroelectric and its materials to applications. through the electrical characteristics and physics modeling. Integrating novel idea, materials, architectures, functions  and research networks, our team delves into the critical roles that potential electronics for future generation. Ultimately, we aim to discover novel high performance/energy-efficieny technologies and strategies for AI Era.


Research Topics

Ferroelectric Memory for CiM computing 

  • FeRAM, FeFET, FTJ, FCM
  • Synapse device
  • novel ferroelectric materials
  • Higher dielectric constant (low EOT) for DRAM

3D Advanced Logic Devices 

  • Low CET Technology
  • Nagative Capacitance
  • 3D architecture (FinFET, GAA)

BEOL channel technology 

  • Oxide-Semiconductor devices
  • Ferroelectric TMD
  • MLC to ACiM

Hetero-Integration for Package

  • Energy Devices Integration
  • GaN-based devices for Power Regulator, 
  • Flexible Electronics

Honor
  • Chenming Hu Award, Pan Wen Yuan Foundation, 2025
  • Outstanding Research Award, National Science and Technology Council, 2024

Educational Background

Ph.D. in Electrical Engineering | National Taiwan University, Taipei, Taiwan (1998-2002) 

M.S. in Physics | National Taiwan University, Taipei, Taiwan (1996-1998) 

B.S. in Physics | National Chung Hsing University, Taichung, Taiwan (1992-1996)


Job Description

The candidate will be working for semiconductor devices process and characterization, including electrical and material analysis. The modeling and simulation also benefits for this job. 

Preferred Intern Educational Level

Bachelor, Master, Ph.D. degree in microelectronics/Materials Science/Engineering/Physics/Mechanical Engineering/Materials Physics with good grades.

Skill sets or Qualities

1. Process Fabrication: Lithography, PVD, etching, ALD, … processes.

2. Characteristization: I-V, C-V, …

3. Material analysis: characterize TEM, SEM, XPS….

4. Modeling and/or simulation: TCAD, ….

5. Team Collaboration