Prof. Wong received a B.Eng. with First Class Honor and a M.Phil degrees in Department of Electronic and Information Engineering from Hong Kong Polytechnic University in 2002 and 2005, respectively. He obtained a Ph.D. degree in electronic and computer engineering from Hong Kong University of Science and Technology (HKUST) in 2009. In his Ph.D. studies, he focused on design and technology development of wide-bandgap gallium nitride (GaN) power and RF devices. He has twenty year academic and industrial experiences on GaN device & IC and Si CMOS technology developments. From Sept. 2009 to Dec. 2017, he worked at the R&D division of TSMC developing the technology platform of advance CMOS, GaN-on-Si power and RF devices. His work at TSMC covered power and RF device design, process and characterization. He successfully led the new GaN projects from R&D to mass production. From Dec. 2017 to Feb. 2023, he was the top leader of R&D team in an IDM company and was responsible for setting up and managing multi-functions including product, device, package, process & integration, reliability, failure analysis, modelling and advance testing teams to develop GaN power IC products. He established the world’s first 8-inch commercial GaN-on-Si product line which passed industrial qualification. These products have been applied to the Tier-1 Ai Chip player system.

Prof. Wong has demonstrated many novel devices including the first GaN smart power IC prototype, an electro-mechanical transducer using two-dimensional electron gas (2DEG) in GaN-based heterojunctions, a zero-bias GaN-based mixer for high-temperature wireless sensing and RFID applications, a GaN-based power transistor with ultralow specific on-resistance by a strain engineering. He is a pioneer in developing and understanding the stability and reliability issues of GaN-based power devices. His presentation on the 1st GaN power integrated circuit won the Charitat Award for the Best Young Researcher in the 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD) in 2009. He has authored and co-authored 50 international literatures. In his industrial career, 313 patents on GaN and Si device technology have been applied and granted. His capability and contributions to the GaN-based device field are recognized internationally, and he has been invited to join the technical program committees of ISPSD and WiPDA (Workshop on Wide Bandgap Power Device and Applications) since 2023 and senior member of IEEE.

Prof. Wong joined National Tsing Hua University (NTHU) in 2023, where he is currently an associate professor in the institute of Electronics Engineering, Department of Electrical Engineering. His research interests are wide-Bandgap semiconductor power and RF device technology, GaN power device & ICs, GaN-based power converters with high-efficiency and high power-density power, RF circuit design.

The lab is led by the Principal Investigator with over 20 years of experience in GaN devices, power ICs, RF technologies, and Si CMOS R&D. The PI previously built and led a multidisciplinary R&D team in an IDM company to develop GaN power IC products, successfully achieving mass production and worldwide industrial recognition.

Our group maintains strong international and industrial collaborations, including with Interuniversity Microelectronics Centre, TSMC, and WIN Semiconductors.

In 2025, the research group consists of 8 PhD students and 22 Master’s students (30 graduate students in total).

Our research focuses on wide-bandgap semiconductor technologies for next-generation power and RF electronics, including high-switching-frequency power transistors and ICs, RF power amplifiers, passive components for power/RF systems, and emerging power devices such as Ga₂O₃, AlN and diamond.

Students receive comprehensive training from device physics to integrated circuit and system applications, including device design, process development, IC driver design, characterization, reliability, modeling, and machine-learning-assisted device and circuit design.