High Power Devices and Circuits Lab
Research Field
Professor Kung-Yen Lee received his Ph.D. and M.S. degrees in Electrical and Computer Engineering from Purdue University in the United States. He joined the faculty of the Department of Engineering Science and Ocean Engineering of National Taiwan University in 2010. He is the Director of the NTU-ITRI Nano Center of NTU since 2023. His current research interests have high power devices, power electronics, wide bandgap semiconductor materials, renewable energy.
The lab focuses on research in 4H-SiC power device design and reliability analysis. Given their superior characteristics, including high thermal conductivity, excellent breakdown voltage, and outstanding switching performance, 4H-SiC power devices play pivotal roles in high-power, high-temperature, and high-efficiency applications, such as electric vehicles, renewable energy systems, and advanced industrial power systems.
The recent research topics cover structural optimization and innovative design approaches for various power devices, particularly 4H-SiC power MOSFETs. In parallel, the lab conducts reliability evaluations—including short-circuit (SC) testing, unclamped inductive switching (UIS), and electrostatic discharge (ESD) testing to evaluate devices' robustness. Our research takes a deep dive into the physical mechanisms, degradation processes, and failure behaviors inside the device structures under extreme testing conditions.
- Future Tech Award, National Science and Technology Council, 2019, 2024
- International Steering and Technical Program Committee Member, ICSCRM 2024 (International Conference on Silicon Carbide and Related Materials), Raleigh, USA
- Vice Chair, SiC and Other Materials: Device and Technology (SiC), TPC of ISPSD (International Symposium on Power Semiconductor Devices and ICs) 2025-2029
- General Chair, IEEE WiPDA-Asia 2023 (Wide Bandgap Power Devices and Applications in Asia), Taipei, Taiwan
- Vice Chair, Power/High-Speed Devices and Materials, TPC of SSDM (International Conference on Solid State Devices and Materials) 2020–2022
Ph.D., Electrical and Computer Engineering , Purdue University , West Lafayette, Indiana , USA.
M.S., Electrical and Computer Engineering , Purdue University , West Lafayette, Indiana , USA.
B.S., Electrical and Control Engineering, NCTU, Taiwan, ROC
Job Description
During the first month, students will receive training in semiconductor fabrication processes and equipment operation, and learn to characterize device electrical properties through I–V and C–V measurements. In the following month, students will perform TCAD simulations and process parameter optimization. Experimental results will be combined with simulation analyses to study how device structure design affects electrical characteristics, along with reliability and stability testing.
Students will compile the measurement and simulation results and complete a research report. The expected outcomes include establishing a comprehensive training framework for SiC power device fabrication and characterization, strengthening students’ abilities in electrical analysis and simulation, and promoting collaboration between academia and industry in next-generation power semiconductor technologies.
Preferred Intern Educational Level
- Master’s graduates or PhD students
- Bachelor’s graduates or Master’s students
Skill sets or Qualities
- Basic knowledge of semiconductor devices
- Interest in power electronics or SiC devices
- Basic experimental or data analysis skills
- Responsible and motivated to conduct research
- Good teamwork and communication skills
Job Description
During the first month, students will receive training in semiconductor fabrication processes and equipment operation, and learn to characterize device electrical properties through I–V and C–V measurements. In the following month, students will perform TCAD simulations and process parameter optimization. Experimental results will be combined with simulation analyses to study how device structure design affects electrical characteristics, along with reliability and stability testing.
Students will compile the measurement and simulation results and complete a research report. The expected outcomes include establishing a comprehensive training framework for SiC power device fabrication and characterization, strengthening students’ abilities in electrical analysis and simulation, and promoting collaboration between academia and industry in next-generation power semiconductor technologies.
Preferred Intern Educational Level
- Master’s graduates or PhD students
- Bachelor’s graduates or Master’s students
Skill sets or Qualities
- Basic knowledge of semiconductor devices
- Interest in power electronics or SiC devices
- Basic experimental or data analysis skills
- Responsible and motivated to conduct research
- Good teamwork and communication skills