Yann-Wen Lan is a Professor in National Taiwan Normal University in Taiwan. He received the B.S. and M.S. degrees from Chemical Engineering, National Taipei University of Technology, Taipei, Taiwan, in 2002 and 2004, respectively. He earned the Ph.D. degree from the Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan, in Jan 2012. From Feb 2012 to Feb 2014, he was a postdoc researcher at Institute of Physics, Academic Sinica in Taiwan. From March 2014 to June 2016, he was a postdoc research fellow in Device Research Laboratory at UCLA. From July 2016 to July 2017, he was an Associated Researcher in the National Nano Device Laboratories in Taiwan. From Aug 2017 to July 2021, he was an associated professor in National Taiwan Normal University. Since Aug 2021, he has awarded as distinguished professor in National Taiwan Normal University. His research interests include fundamental quantum physics and practical applications based on 1D nanowire/nanotube, 2D layered materials and energy nanoelectronics. 

The Lan group research focuses on the science and technology of nanomaterials. Our research is multidisciplinary; the group includes researchers with diverse backgrounds, including chemistry, physics, material science, and electrical engineering.

One main research goal is to study the fundamental physics and build atomically-thin integrated circuitry. In order to build atomically thin integrated circuitry, we develop advanced growth, characterization and device fabrication methods for 2D layered materials, which specifically include semiconducting transition metal dichalcogenides. For the study of fundamental physics, for example, we reported “Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2” (Nano Letters 2014 [6]) and “Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenides/Ferromagnet Bilayers” (Nano Letters 2016 [2]). 

Based on resonant tunneling phenomenon and other fundamental physics, we would like to extend to another research goal for exploring novel electrical, optical, piezoelectric, magnetic and optoelectronic properties of low-dimensional nanostructures. These will allow the development of advanced devices, including highly efficient solar cells, ultrasensitive infrared bolometric detectors, and novel valleytronic and spintronic devices. In the past, we reported " CVD-grown atomic-monolayer triangular MoS2 piezotronics" (Nature Communications 2015 [5]), “ High-current gain two-dimensional MoS2-base hot-electron transistors” (Nano Letters 2015 [4]), “Self-aligned graphene oxide nanoribbon stack with gradient bandgap for visible-light photodetection” (Nano Energy 2016 [3]) and “Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors” (ACS Nano 2017 [1]). 

Selected References

1.   Che-Yu Lin, Xiaodan Zhu, Shin-Hung Tsai, Shiao-Po Tsai, Sidong Lei, Yumeng Shi, Lain-Jong Li, Shyh-Jer Huang, Wen-Fa Wu, Wen-Kuan Yeh, Yan-Kuin Su, Kang L. Wang and Yann-Wen Lan* “Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon” ACS Nano,  DOI: 10.1021/acsnano.7b05012  / Publication Date (Web): 04 Oct 2017 (Corresponding author*, SCI, impact factor：13.942) 

2.   Qiming Shao*, Guoqiang Yu*, Yann-Wen Lan*, Yumeng Shi, Ming-Yang Li, Cheng Zheng, Xiaodan Zhu, Lain-Jong Li, Pedram Khalili and Kang L. Wang. “Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenides/Ferromagnet Bilayers” Nano Letters, Accepted in November, DOI: 10.1021/acs.nanolett.6b03300, 16, 7514-7520, 2016. (Equal first author*, SCI, impact factor：13.592)

3.   Yann-Wen Lan*, Carlos M. Torres Jr., Xiaodan Zhu, Chia-Liang Sun, Shuanglin Zhu, Chii-Dong Chen* and Kang L. Wang. “Self-aligned graphene oxide nanoribbon stack with gradient bandgap for visible-light photodetection. Nano energy, 27, 114-120, 2016.  (Corresponding author*, SCI, impact factor：11.553)

4.   Carlos M. Torres Jr.§, Yann-Wen Lan§,*, Caifu Zeng, Jyun-Hong Chen, Xufeng Kou, Aryan Navabi, Jianshi Tang, Mohammad Montazeri, James R. Adleman, Mitchell B. Lerner, Yuan-Liang Zhong, Lain-Jong Li, Chii-Dong Chen and Kang L. Wang* “ High-current gain two-dimensional MoS2-base hot-electron transistors”. Nano Letters 15, 7905-7912, 2015. (Equal first author§ and Corresponding author*, SCI, impact factor：13.592)

5.   Junjie Qi§, Yann-Wen Lan§,*, Adam Stieg, Jyun-Hong Chen, Yuan-Liang Zhong, Lain-Jong Li, Chii-Dong Chen, Yue Zhang*, and Kang Wang*, "Piezoelectric effect in CVD-grown atomic-monolayer triangular MoS2 piezotronics" Nature Communications, 6, pp7430, 2015. (Equal first author§ and Corresponding author*, SCI, impact factor：11.470, Rank: 3/55)

6.   Linh-Nam Nguyen, Yann-Wen Lan*, Jyun-Hong Chen, Yuan-Liang Chung, Kuei-Shu   Chang-Liao, Lain-Jong Li, and Chii-Dong Chen*. “Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2” Nano Letters, 14(5), pp 2381-2386, 2014. (Corresponding author, SCI, impact factor：13.592)